Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Abstract

In this work, the consequence of the high band-edge density of states on the\ncarrier statistics and quantum capacitance in transition metal dichalcogenide\ntwo-dimensional semiconductor devices is explored. The study questions the\nvalidity of commonly used expressions for extracting carrier densities and\nfield-effect mobilities from the transfer characteristics of transistors with\nsuch channel materials. By comparison to experimental data, a new method for\nthe accurate extraction of carrier densities and mobilities is outlined. The\nwork thus highlights a fundamental difference between these materials and\ntraditional semiconductors that must be considered in future experimental\nmeasurements.\n