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Effect of High BZO Dopant Levels on Performance of 2G-HTS MOCVD Wire at Intermediate and Low Temperatures
16
Citations
13
References
2012
Year
Superconducting MaterialElectrical EngineeringOptimum PerformanceLow TemperaturesEngineeringHigh Voltage EngineeringPhysicsHigh-tc SuperconductivityApplied PhysicsQuantum MaterialsSuperconductivityCondensed Matter PhysicsPinning Performance2G-hts Mocvd WireBarium ZirconateSolid-state PhysicSemiconductor Device
Flux pinning in REBCO (rare-earth Ba-Cu-O) by self-assembly of BZO (barium zirconate) nanorods has emerged as one of the most prominent techniques for improving the in-field performance of 2G-HTS wire in terms of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> and angular <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> anisotropy. In our previous study on metalorganic chemical vapor deposition REBCO wire, an optimum performance was found for 7.5% Zr at 1 T, 77 K, while further increase in Zr content resulted in <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> degradation. However, recent results indicate that the pinning performance at high Zr content actually surpasses that of the 7.5% Zr wire at intermediate and low temperatures. In-depth understanding of the effect of high Zr levels on REBCO provides a strong potential for further substantial increase in pinning performance at high Zr content if the unwanted effects can be minimized by process modification. In this study, we analyze the effect of high Zr doping levels on REBCO properties with emphasis on microstructure analysis. Structural properties as a function of BZO dopant level have been analyzed using X-ray reciprocal space maps and transmission electron microscopy, while the performance has been characterized using angular in-field <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> characterization up to 9T at temperatures of 20-77 K.
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