Materials science forum · 1992 · 18 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsOptoelectronicsDislocation TheoryDislocations In SemiconductorsOptical Properties Of SemiconductorsSemiconductor DefectsSilicon MaterialsSilicon PhotonicsDislocation PhysicsDislocationsPhotoluminescenceSilicon DefectsSilicon Optical Properties
The D-band recombination in silicon is found to be independent of impurities trapped at dislocations. Deliberate contamination of high purity silicon samples, containing dislocations, with copper or iron results in a drastic decrease of the D-band photoluminescence. After a reduction of the copper and iron concentration, the D-bands reappear and increase in intensity by two orders of magnitude. The intensities and polarizations of the D-band photoluminescence depend strongly on the direction of detection and on the structure of the dislocation. We correlate the Dsub1/Dsub2- recombination with the stacking fault between two Shockley partial dislocations.