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Tunnelling through very low barriers
12
Citations
3
References
1985
Year
Wide-bandgap SemiconductorGaas/ga1−xalxas/gaas HeterostructuresEngineeringLowest BarrierSemiconductor DeviceLow BarriersTunneling MicroscopyNanoelectronicsTunnelingTransport PhenomenaElectrical EngineeringPhysicsWell BarriersUnderground ConstructionMicroelectronicsCategoryiii-v SemiconductorApplied PhysicsFloating TunnelOptoelectronics
Tunnelling through very low barriers made with GaAs/Ga1−xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 Å. Reasonable agreement between design parameters, measured data and theoretical values is obtained.
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