Nitronyl Nitroxide Radicals as Organic Memory Elements with Both n‐ and p‐Type Properties

Junghyun Lee, Eunkyo Lee, Sangkwan Kim, Gyeong Sook Bang, David A. Shultz, Robert D. Schmidt, Malcolm D. E. Forbes, Hyoyoung Lee

Angewandte Chemie International Edition · 2011 · 122 citations · 34 references

Concepts

Abstract

Can't fight the SEEPR: Simultaneous electrochemical electron paramagnetic resonance reveals that a molecule containing the nitronyl nitroxide (NN) radical (structure and red layer) is redox-active, with switchability between oxidized and reduced states. An organic NN radical device utilizes the dual p- and n-type properties in a memory device.

References

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