High-power GaN diode-pumped continuous wave Pr^3+-doped LiYF_4 laser

Abstract

A cw Pr3+:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.