Nanotechnology · 2006 · 198 citations · 25 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsNanomaterialsSemiconductor MaterialsNanowiresSemiconductor HeterostructuresSemiconductor NanomaterialsSemiconductor PhysicsStrain AnalysisTransmission Electron MicroscopyFinite Element ModelingFinite Element SimulationHeterostructured NanowiresLattice ParametersSemiconductor NanowiresStrain In NanostructuresStrain MappingTransmission Electron Microscopy Strain Mapping
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
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