The importance of predicting rate-limited growth for accurate modeling of commercial MOCVD reactors

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Engineering, Materials Engineering, Materials Science +17

Surface chemkin: A general formalism and software for analyzing heterogeneous chemical kinetics at a gas‐surface interface

Michael E. Coltrin, Robert J. Kee, F.M. Rupley · International Journal of Chemical Kinetics · 1991 · 164 citations

Natural Sciences, Chemical Engineering, Chemistry +17

Gas‐Phase and Surface Reaction Mechanisms in MOCVD of GaAs with Trimethyl‐Gallium and Arsine

T. J. Mountziaris, Klavs F. Jensen · Journal of The Electrochemical Society · 1991 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Elementary processes and rate-limiting factors in MOVPE of GaAs

Max Tirtowidjojo, Richard Pollard · Journal of Crystal Growth · 1988 · 96 citations

Engineering, Materials Science, Physics +10

A FAST MONTE CARLO SCHEME FOR THERMAL RADIATION IN SEMICONDUCTOR PROCESSING APPLICATIONS

Numerical Heat Transfer Part B Fundamentals · 2000 · 59 citations

Engineering, Computational Engineering, Heat Transfer +13