Control of the interface shape in vertical Bridgman grown CdZnTe crystals for X-ray detector applications

Abstract

Several 2 inch CdZnTe crystals have been grown by the Vertical Bridgman technique and growth interface shape has been studied by photoluminescence mapping. The results show that it is possible to obtain a convex interface shape for the whole crystal by the combined use of a highly thermally conductive ampoule support and an element covering melt top, with higher thermal conductivity than the CdZnTe melt preventing the direct contact of melt and vapour.