Electronics Letters · 2000 · 67 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesQuantum WellsSemiconductor LasersContinuous-wave LasersHigh-power Semiconductor LasersLaser ThresholdLasersQuantum Well GainQuantum Well LasersQuantum Well StructuresSingle-mode Semiconductor Lasers
Narrow ridge 5 µm-wide GaInSbAs/GaAlSbAs quantum well (QW) lasers emitting in the continuous wave (CW) regime at temperatures up to 130°C have been fabricated. The CW threshold current varied between 20 and 35 mA at room temperature (RT). The lasers operated in the fundamental spatial mode and exhibited single longitudinal mode emission over a wide range of CW operation conditions. The emission wavelength increased from 2.26 µm at RT up to 2.43 µm at 124°C. The CW output optical power reached 45 mW/facet at 22°C and exceeded 10 mW/facet at 100°C.
2
D.Z. Garbuzov, R. Menna, M. Maiorov et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1999 · 20 citations