Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices

Abstract

The transfer matrix method (TMM) has been applied to analyze the gain and saturation characteristics of semiconductor laser optical amplifiers. This method approximates the amplifier cavity by dividing it into M discrete subsections, and TMM has been applied to analyze the stepwise longitudinal field distribution at each subsection along the amplifier cavity. By incorporating also the carrier rate equations into the analysis, it has been shown that the approximation can accurately describe the carrier density and longitudinal field distribution along the amplifier cavity if M is sufficiently large (i.e., the size of each subsection is about an order of magnitude of one wavelength of the input signal). By assuming that the amplifier is biased below oscillation threshold such that the contribution of spontaneous emissions to the gain characteristics can be neglected, we have shown that our proposed method yields a fast and efficient algorithm in analyzing the gain and saturation characteristics of laser amplifiers. We have compared the results produced by our method to those analyzed using the average photon density (AVPD) approximation technique, as well as to experimental results on a 1.5-/spl mu/m buried heterostructure semiconductor laser amplifier.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>