In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides

Abstract

We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at below-bandgap wavelengths (1440-1590 nm) which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted samples which were annealed at 200 degC, 300 degC, or 350 degC for different durations. Optical absorption and photodetector current measurements were performed for each sample. The ICPM can provide the same function as a waveguide tap coupler and a hybrid-integrated conventional photodiode