Symposium on VLSI Technology · 2006 · 205 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignDevice ModelingField-effect TransistorsHigh-frequency Semiconductor DevicesTunnelingWide-bandgap Semiconductor DevicesBandgap EngineeringCmos ScalingEnergy PerformanceEnergy-delay OptimizationEnergy-delay TradeoffTunnel JunctionsTunneling CurrentTunneling Field-effect Transistors
Tunnel field effect transistors (TFETs) with record high I ON /I OFF ratio (≫106) for low-voltage (0.5V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band-to-band tunneling current model. Using the calibrated analytical model, the energy-delay performance of TFET-based technology is compared against that of conventional CMOS technology, at the 65nm node. The TFET is projected to provide dramatic improvement in energy efficiency for performance in the range up to ∼0.5GHz.