Green laser diodes with channelled-substrateplanar waveguide structure

Abstract

The first II-VI index guided inner stripe laser diodes grown by one-step molecular beam epitaxy (MBE) on a structured GaAs substrate have been fabricated. The laser, operating at a wavelength of 512 nm, consists of a ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) grown on a 6 µm wide channelled substrate containing a p-GaAs current blocking layer on (100) n-GaAs. The threshold current density was as low as 350 A/cm2 for the 1 mm long as-cleaved device under room temperature pulsed conditions.