Scaling of terahertz radiation from large-aperture biased InP photoconductors

Abstract

We present, for biased InP emitters, the dependence of the generated terahertz radiation on bias field and optical fluence for optical fluences of 0.01–1.0 mJ/cm2 and bias fields as high as 12 kV/cm. The radiated electric field scales linearly with the bias field up to 12 kV/cm and exhibits monotonic saturation behavior, radiating half the maximum field at an excitation fluence of 0.058 mJ/cm2.