High‐Performance n‐ and p‐Type Single‐Crystal Organic Transistors with Free‐Space Gate Dielectrics

Abstract

A novel single-crystal organic field-effect transistor (OFET) is described, in which the gate dielectric is replaced by a thin gap that can be occupied by a gas or vacuum. When used in combination with high-quality rubrene or tetracyanoquinodimethane (TCNQ) crystals, n- and p-devices with extremely good mobilities and normalized sub-threshold slopes, representing the ultimate in OFET performance, are realized. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2004/c1017_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.