Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure

Abstract

We report on the fabrication of dual-gate organic thin-film transistors using plasma-enhanced atomic layer deposited thick and thick parylene as gate dielectrics and pentacene as a semiconductor. The threshold voltage is changed from 14.5 to when the voltage bias of the top-gate electrode is changed from to . The voltage transfer characteristics of an inverter with a dual-gate driver transistor and a single-gate load transistor, specifically, swing range and inversion voltage, have been artificially controlled by changing the voltage bias of the top-gate electrode.