U-band MMIC HBT DRO

Abstract

A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than /spl minus/132 dBc/Hz phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>