2002 · 12 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave PackagingRadio-frequency Integrated CircuitsConversion GainMicrowave ReceiversMillimeter-wave Integrated CircuitsMillimeter-wave ReceiversMonolithic Microwave Integrated CircuitsNoise FigureRadio-frequency Integrated Circuit DesignReceiver Architecture
We present a 60 GHz integrated sub-harmonic receiver fabricated using the TRW 0.15 /spl mu/m gate length GaAs pHEMT foundry process. The receiver MMIC consists of a four stage LNA, a sub-harmonic diode mixer and a single stage LO buffer amplifier. The chip size is 5.8 mm/spl times/2.2 mm. The receiver MMIC has been integrated into a coaxial package for system evaluation. The packaged receiver module has a measured conversion gain of /spl ges/8 dB across the 58 GHz to 67 GHz frequency band and a typical noise figure of 5.8 dB. The use of a sub-harmonic mixer allows LO operation over the 21 to 27 GHz frequency range at a low LO drive level of -5 dBm and eliminates the need for high cost mm-wave sources. This is believed to be the first single chip V-band receiver manufactured using a commercially available, high yield, production foundry process. This paper describes the design, packaging and measured performance of the integrated sub-harmonic receiver MMIC.
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A V-band GaAs MMIC chip set on a highly reliable WSi/Au refractory gate process
J. Mizoe, Takeshi Matsumura, K. Unosawa et al. · 2002 · 13 citations
60 GHz GaAs MMIC technology for a high data rate mobile broadband demonstrator
U. Güttich, A. Plattner, W. Schwab et al. · 2002 · 12 citations