1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

Abstract

We demonstrate the first 1.3-μm continuous-wave (CW) lasing at room temperature of self-assembled InGaAs-GaAs quantum dots. High-density 1.3-μm emission dots were successfully formed by the combination of low-rate growth and InGaAs-layer overgrowth methods of molecular beam epitaxy. The 1.3-μm ground-level CW lasing occurred at up to 40/spl deg/C, and the threshold current of 8 mA at 25/spl deg/C is less than one thirtieth of values ever reported for 1.3-μm dot pulse lasers. The achievement represents a milestone for creating quantum-dot lasers applicable to fiber-optic communication system.