High Gain <formula formulatype="inline"><tex>$\times$</tex></formula> Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

Abstract

This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> antireflection coating. The combined properties of very low dark current ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</sub> ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</i> = 0) = 17 nA), low excess noise factor (f(M = 10) = 3.5), and high gain x bandwidth product over 140 GHz were simultaneously achieved with a high primary responsivity of 0.95 A/W at 1.55 mum.