An Individual Carbon Nanotube Transistor Tuned by High Pressure

Abstract

Abstract A transistor based on an individual multiwalled carbon nanotube is studied under high‐pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold–nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.