Low‐Temperature Combustion‐Synthesized Nickel Oxide Thin Films as Hole‐Transport Interlayers for Solution‐Processed Optoelectronic Devices

Abstract

A method to deposit NiOx thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiOx films exhibit high work functions, excellent optical transparency, and flat surface features. The NiOx thin films are employed as hole-transport interlayers in organic solar cells and polymer light-emitting diodes, exhibiting superior electrical properties.