Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications

Abstract

This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and can deliver up to 2.5 dBm at 110 GHz.