Enhanced photovoltage in perovskite-type artificial superlattices on Si substrates

Abstract

We have fabricated a three-component perovskite-type superlattice (SL) consisting of La0.9Sr0.1MnO3, SrTiO3 and LaAlO3 with atomic scale control by laser molecular beam epitaxy on Si substrates. When a He–Ne laser irradiated the superlattice by side illumination, a stable photovoltage was produced and the responsivity reached 46.7 mV mW−1 which is six times higher than that of a similarly grown La0.9Sr0.1MnO3 single layer on Si substrates. This work demonstrates the potential of the present SL in photo-detectors operating at room temperature.