High power control components using a new monolithic FET structure

Abstract

A monolithic-switch FET (MFET) control device that can be integrated with other monolithic functions or used as a discrete component in a monolithic microwave integrated circuit (MMIC) structure is presented. The MFET device is a suitable replacement for p-i-n diodes as a generic control element in applications from 10 W to several hundred W CW, and has the advantages of a conventional GaAs switch FET (SFET). The increased power handling is due to the device's ability to overcome the breakdown voltage limitation of conventional SFETs. The design, fabrication, and performance of two high-power control components using MFET devices are described as examples of the implementation of this technology: an L-band terminated single-pole single-throw (SPST) switch, and an L-band limiter.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>