Performance Potential and Limit of MoS₂ Transistors

Abstract

High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise of 2.8 × 10(-10) μm(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self-heating is identified using pulsed-current-voltage measurements.