Enhancement of electric field-induced refractive-index variation in a (GaInAsP)(InAs)/InP asymmetric multiple-quantum-film (MQF) structure

Abstract

The authors report the field-induced refractive-index variation in (GaInAsP)/InP asymmetric quantum-film structures. An enhancement of an electric field-induced refractive-index variation due to the quantum confined Stark effect was theoretically found in the GaInAsP-InAs/InP asymmetric quantum-film structure, especially in a low electric-field regime. Almost two times higher sensitivity was experimentally confirmed in a 40-period GaInAsP (8 nm)-InAs (0.3-0.6 nm)/InP (8 nm) asymmetric multiple quantum-film (MQF) structure in comparison with a symmetric one without an InAs layer at an applied electric field less than 6 V/ mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>