Preparation and Photoluminescence of Thulium‐Activated Zinc Sulfide Films

Abstract

Thin films of thulium‐activated have been deposited on glass, sapphire, and dielectric‐coated silicon by thermal evaporation, RF magnetron sputtering, and low pressure chemical vapor deposition. Films have been annealed under different atmospheres (vacuum, , and ) and a range of temperatures (450–800°C) to determine the effect on the emission properties. Photoluminescence measurements show that , halide films emit almost exclusively in the near‐infrared (800 nm), whereas sputtered ,Li films are intense blue (478 nm) emitters after annealing in at 800°C.