Publication | Closed Access
A HIGH OPERATING TEMPERATURE (HOT) MIDDLE WAVE INFRARED (MWIR) QUANTUM-DOT PHOTODETECTOR
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Citations
10
References
2011
Year
Quantum PhotonicsOptical MaterialsEngineeringMiddle Wave InfraredHigh Operating TemperaturePhotodetectorsOptical PropertiesQuantum DotsInfrared OpticCompound SemiconductorPhotonicsElectrical EngineeringQuantum-dot PhotodetectorPhysicsInfrared TechnologyPhotoelectric MeasurementInfrared SensorApplied PhysicsInas/gaas Quantum DotQuantum Photonic DeviceOptoelectronicsLarge Photoresponsivity
In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 6 μm. A large photoresponsivity of 6.4 A/W at a low bias voltage of 0.5 V and a high peak specific photodetectivity D* of 6.0 × 107cmHz1/2/W were obtained at a high operating temperature of 230 K.
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