Spin-valve films using exchange-coupled CrMnPt/Co structure

Abstract

Spin-valve films using CrMnPt/Co structure were investigated. The exchange coupling field (Hex) applied on 3 nm thick Co pinned layers was increased by annealing from 190 Oe to 320-380 Oe. The annealing treatment necessary for the enhancement of the Hex was typically 230/spl deg/C, 1 hr. The annealing distorted the crystal lattice of the CrMnPt films, which is likely to enhance the Hex. The blocking temperature was 320/spl deg/C. The resistivity of the CrMnPt films was as high as 300 /spl mu//spl Omega/cm resulting in low current shunting to antiferromagnetic layers in spin-valve films.