IEEE Journal of Solid-State Circuits · 1969 · 11 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave MeasurementsMicrowave OscillatorsMicrowave ResonatorsMicrowave Semiconductor DevicesAmplificationBandwidthCoaxial ResonatorsMicrowave DevicesPower Conversion EfficiencyPower GainSaturationSubharmonic Resonance
Silicon diodes pulse operated in avalanche resonance pumped modes have produced stable microwave amplification with up to 25 percent dc to RF conversion efficiency. The p/sup +/-n-n/sup +/ diodes were mounted in a coaxial line resonator. Under conditions of self-generated pump signals at or close to the avalanche resonance frequency between 8.8 and 10.4 GHz, a low-power gain of 19, 20, end 16 dB was measured at 1.3, 3.2, and 4.4 GHz, corresponding to the seventh, second, and first subharmonic. At 1.3 GHz, a high-power gain of 12 dB resulted in a dc to RF conversion efficiency of 25 percent. The normalized (gain)/sup 1/2/ X bandwidth product was 12 percent. Amplifier saturation related to decreasing pump amplitudes is reported.
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