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ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
24
Citations
10
References
1994
Year
Ii-vi SemiconductorRoom TemperatureElectrical EngineeringCarrier OverflowEngineeringOptical PumpingSemiconductor LasersApplied PhysicsLaser MaterialPulsed Laser DepositionMultilayer HeterostructuresEnergy DifferenceOptoelectronicsCompound Semiconductor
Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe separate-confinement heterostructure (SCH) lasers has been achieved in a wavelength range from 485.7 to 521.6 nm. We have achieved shorter wavelength blue at room temperature than thus far reported. A decrease in threshold current density J th and a increase in the slope efficiency for ZnCdSe/ZnSe/ZnMgSSe SCH laser diodes were observed as the energy difference between the active and cladding layers was increased. We determined that more than 0.35 eV for Δ E g is necessary in order to suppress the carrier overflow. A high characteristic temperature T 0 of 217 K was achieved for a laser diode with Δ E g of 0.40 eV.
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