ZnO‐Nanowire‐Inserted GaN/ZnO Heterojunction Light‐Emitting Diodes

Abstract

Out of the blue: Light-emitting diodes were obtained by fabricating p+-GaN film/n-ZnO nanowire array/n+-ZnO film structures (see figure). Blue electroluminescence (EL) emission was observed from the nanowire-inserted heterojunction diodes under forward bias. These diodes exhibited improved EL emission and injection current compared to those of film-based heterojunction diodes.