High performance resistive EHF mixers using InGaAs HEMTs

Abstract

The design, fabrication, and testing of a hybrid and a monolithic single-balanced EHF mixer are presented. Very low mixer intermodulation distortion was achieved using a 0.2- mu m*160- mu m pseudomorphic InGaAs high-electron-mobility transistor (HEMT) biased in the resistive mode. Both mixers show similar excellent measured performance. Mixer conversion loss over the 26-29 GHz RF frequency band is about 7-9 dB for DC to 2 GHz IF (intermediate frequency) frequencies. With an LO (local oscillator) power of +13 dBm, the measured input two-tone third-order intercept point is higher than +24 dBm.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>