Second Generation HTS Wire Based on RABiTS Substrates and MOD YBCO

U. Schoop, M.W. Rupich, C. Thieme, D. T. Verebelyi, W. Zhang, X. Li, T. Kodenkandath, E. Siegal, L. Civale, T. G. Holesinger,

IEEE Transactions on Applied Superconductivity · 2005 · 103 citations · 15 references

Concepts

TL;DR

The 2G high‑temperature superconducting wire is approaching the 300 A cm⁻¹ threshold needed for commercial power cables. The study aims to scale up the RABiTS/MOD process economically, refine conductor properties for specific applications, and deploy 2G wire in early demonstration projects. The manufacturing method combines RABiTS substrate‑buffer technology with metal‑organic deposition of the YBCO layer. Demonstrations include 10‑meter lengths with critical currents >250 A cm⁻¹, short samples reaching 380 A cm⁻¹, and a two‑fold increase in 65 K, 3 T critical current when nanodots are incorporated into the YBCO layer.

Abstract

The performance of Second Generation (2G) high temperature superconducting wire manufactured by continuous reel-to-reel processes is nearing the 300 A/cm-width (77 K, self field) performance threshold for commercial power cable applications. The 2G manufacturing approach under development at American Superconductor is based on the combination of the RABiTS substrate-buffer technology with metal organic deposition (MOD) of the YBCO layer. The capability of this process has been demonstrated in multiple 10 meter lengths with critical currents exceeding 250 A/cm-width with high uniformity and reproducibility. Critical currents of 380 A/cm-width have been achieved in short length samples prepared by the same basic process. The incorporation of nanoparticles ("nanodots") into the YBCO layer using the MOD process has resulted in a 2-fold improvement in the critical current at 65 K in a 3 T field. The research and development focus at ASMC is now directed toward the economical scale-up of the RABiTS/MOD process, optimization of the conductor properties for targeted applications and the use of 2G wire in initial demonstration applications.

References

15