IEEE Transactions on Microwave Theory and Techniques · 2005 · 51 citations · 13 references
EngineeringElectrical EngineeringAnalog ElectronicsCircuit TheoryPower ElectronicsCurrent-voltage CharacteristicsDevice ModelingDistortion AnalysisImpedance MatchingNonlinear Circuit AnalysisPower QualityHarmonic DistortionIntermodulation AnalysisIntermodulation DistortionLarge-signal AnalysisLarge-signal Distortion AnalysisNonlinear Distortion AnalysisThird-order DistortionVolterra Theory
This paper presents an analysis technique implemented on top of normal harmonic-balance simulation, where the simulated nonlinear voltage and current spectra is used for fitting a polynomial device model around the large-signal bias point. Further, using the fitted model and spectra of the controlling voltages, the detailed structure of the third-order intermodulation distortion is calculated using a simplified form of Volterra analysis. This detailed information can be used to find the dominant causes of distortion and possible cancellation mechanisms, to study the bandwidth-dependent memory effects caused by up- or down-converted mixing results, or to find harmonic matching impedances that minimize the overall distortion.
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A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
W.R. Curtice, D. Bridges, Tao Liang et al. · 2003 · 103 citations