A Si bipolar monolithic RF bandpass amplifier

Abstract

The application of monolithic inductors to the realization of Si bipolar monolithic RF amplifiers is investigated. As a test vehicle, a bipolar monolithic bandpass amplifier was fabricated and characterized. A 4-nH silicon integrated inductor was used to achieve a peak S/sub 21/ gain of 8 dB, a simulated noise figure of 6.4 dB, and a matched input impedance of 50 Omega in the frequency range of 1-2 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>