Journal of The Electrochemical Society · 2002 · 63 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceElectrochemistryMagnetic MaterialsThin FilmsMagnetic CharacterizationMagnetic OxidesMagnetic Thin FilmsSurface MagnetismSurface PhysicsThin Film Magnetic PropertiesFilm ThicknessMagnetic PropertiesMagnetization In Thin FilmsMagneto-optical Kerr EffectMagnetoresistanceSiliconSilicon WafersSurface Effects
The electrodeposition of thin films of the element cobalt on silicon wafers opens the possibility of producing magnetic structures on top of a technological substrate using an efficient and inexpensive method. In this paper, we present an extensive study of the electrodeposition of Co on Si(100) n-type substrates. Co thin films with metallic appearance and uniform thickness were obtained at deposition rates of 0.6 (2.8) nm/s for the 26 (104) mM Co electrolyte. A strong dependence of the surface roughness on the nucleation mechanism, i.e., instantaneous or progressive, was observed for layer thicknesses below 300 nm. Simultaneous magneto-optical Kerr effect and magnetoresistance measurements showed that magnetic behavior depends on the nucleation mechanism as well. Coercivity decays with increasing thickness, following a power law of the type with (2.1) for the 26 (104) mM electrolyte, which reflects a strong dependence of the magnetic behavior on surface effects. A large variation of the in-plane coercive fields was observed for the 104 mM electrolyte, which varied from 730 to 13 Oe as film thickness increased from 26 to 260 nm. © 2002 The Electrochemical Society. All rights reserved.
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Theoretical and experimental studies of multiple nucleation
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Natural Sciences, Materials Engineering, Materials Science +17