Oxidation-Induced Modifications of Trap Parameters in Nanocrystalline Porous Silicon

Abstract

The changes produced by anodic and natural oxidation upon the trap parameters in nanocrystalline porous silicon were compared. To put them in evidence, we used optical charging spectroscopy. The same trapping levels (with the same activation energies) were observed after both oxidation processes. In comparison with fresh samples, a new trapping level (the deepest one) appears and the concentrations of the surface traps strongly diminish.