Journal of The Electrochemical Society · 2007 · 25 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureMaterials ChemistryThin FilmsMetal SulfidesSemiconductor Thin FilmsThin-film MaterialsAtomic Force Microscopy AnalysisBand Gap EnergyCadmium SelenideCadmium SulfideDiffraction PatternsEnergy Gap AnalysisStoichiometry DeterminationX-ray Diffraction Analysis
Cadmium sulfide thin films were deposited in an oscillating chemical bath using a Teflon vane connected to an electrical dental brush oscillating at . The range of the bath temperature was from 65 to in intervals of and different deposition times. By this agitation technique we obtained films with a highly oriented hexagonal structure (α-greenockite) in the (002) direction as measured by X-ray diffraction patterns. Images of atomic force microscopy and stoichiometry values obtained by energy-dispersive analysis by X-ray confirm the good quality of deposited films. High stoichiometry on the films was measured by elemental analysis with variations less than 3.5% in all samples. The mean value of the gap energy was about , a close value for these films.
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