Transferable Graphene Oxide by Stamping Nanotechnology: Electron‐Transport Layer for Efficient Bulk‐Heterojunction Solar Cells

Abstract

Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.