Highly Oriented, Chemically Prepared Pb(Zr, Ti)O ₃ Thin Films

Abstract

We have fabricated highly oriented, chemically prepared thin films of Pb(Zr 0.04 Tio. 0.60 )O 3 (PZT 40/60) on both insulating and conducting substrates. While (100) MgO single crystals were used as the insulating substrates, the conducting substrates. were fabricated by RF magnetron sputter deposition of 100‐nm‐thick (100) Pt films onto (100) MgO substrates. For comparison, we also fabricated PZT 40/60 films that had no significant preferential orientation on platinized MgO substrates. Sputter deposition of an underlying amorphous Pt film was used to fabricate randomly oriented PZT 40/60 films. Highly (001) oriented PZT 40/60 films had higher remanent polarization (61 μC/cm 2 compared to 41 μC/cm 2 ) and lower relative dielectric constant (368 compared to 466) than PZT 40/60 films that were randomly oriented.