IEEE Journal of Solid-State Circuits · 2001 · 78 citations · 5 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignLow-noise Circuit DesignNoise In Analog CircuitsNoise In Electronic DevicesCmos Analog Integrated CircuitsGainNoise FigureNoise Figure AnalysisNoise Figure MeasurementNoise In AmplifiersNoise Performance AnalysisPower Consumption
This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-/spl mu/m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V.
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Accurate thermal noise model for deep-submicron CMOS
A.J. Scholten, H. J. Tromp, L.F. Tiemeijer et al. · 2003 · 101 citations