IEEE Microwave and Wireless Components Letters · 2008 · 26 citations · 10 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsMicrowave EngineeringCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsConversion GainIntegrated Circuit MixersMixer CircuitsMixersPower ConsumptionPower Consumption OptimizationRf Cmos Design
10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The total power consumption included output buffer is only 6 mW.
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