IEEE Photonics Technology Letters · 2009 · 203 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsRadiation DetectionSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDetector TechnologyDevice CharacterizationOptoelectronic DevicesPhotodetectorsSemiconductor DetectorsAnode DesignComplementary Metal-oxide-semiconductor DetectorsPeak Detection EfficiencyPhoton DetectionSingle-photon Avalanche Diodes
A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> active area device exhibits a dark count rate of 25 Hz at 20 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C and a photon detection efficiency peak of 28% at 500 nm.
11