High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers

Abstract

An analytical model of the effect of heating on the high-power and high-temperature operation of semiconductor multiple quantum well lasers (MQWLs) is developed. Both the lattice heating and the carrier heating in the active region are shown to play an important role. The lattice heating predominates at high injection currents, while the carrier heating prevails at low currents. The maximum output power and the corresponding injection current are shown to be decreasing functions of temperature. The ways to increase the maximum output power of MQWLs are discussed. The effect of the series resistance on the maximum output power is investigated. Optimization of MQWLs with respect to the QW number and the cavity length is carried out. The results are illustrated by the example of a ridge MQW structure lasing at 1.3 μm. The theoretical and experimental dependences are compared.