A 40-dBm high voltage broadband GaN Class-J power amplifier for PoE micro-basestations

Abstract

A broadband, efficient and linear RF power amplifier for 4G multi-standard micro-basestations is presented. With an optimized Class-J matching network and a new commercially available high voltage 10W GaN HEMT, output power around 40.5dBm is measured across 1.65-2.70GHz with 55-72% drain efficiency at 1-dB compression point under CW stimulus. Using a 20MHz modulated test signal at 2.5GHz with 9.5dB PAPR, high average efficiency of 48% was measured at 35.9dBm average output power, with ACPR better than -30dBc. To the author's best knowledge, this is the first Class-J prototype operating at 47V, enabling power over ethernet applications without any external voltage regulation, thereby further reducing bill of materials and improving the overall system efficiency.