Effect of defects in ferromagnetic C doped ZnO thin films

Abstract

Abstract The present work investigates the relation between ferromagnetism and intrinsic defects of C‐doped ZnO thin films. The room‐temperature ferromagnetism (RTFM) in C‐doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long‐range magnetic interaction in C‐doped ZnO is due to carbon–carbon interaction mediated by oxygen. The oxygen‐ and zinc‐related defects in C‐doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.