IEEE Transactions on Microwave Theory and Techniques · 1976 · 23 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesImpedance MatchingMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsAbsolute StabilityGaas Microwave Integrated CircuitsHigh-frequency Amplifier DesignHigh-gain AmplifiersHybrid CouplersMicrowave Amplifier DesignPower AmplificationWideband Amplifiers
The design of 100-mW GaAs MESFET amplifiers for the 2-6.2-GHz and 5.9-12.4-GHz bands is described. Both small-signal and large-signal matching considerations are presented to obtain a minimum 10-dB gain using a 1-mu m GaAs MESFET. Three combination techniques, direct paralleling, resistive combiners, and hybrid quadrature couplers are discussed. Finally, considerations for absolute stability are presented.
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